First-principles Modeling of Bipolar Resistive Switching in Metal-oxide Based Memory
نویسندگان
چکیده
A microscopic model of the resistive switching mechanism in bipolar metal-oxide based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. A hysteresis cycle of RRAM switching simulated with the model including the ion dynamics is in good agreement with experimental results.
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